Technical Consultant

Tel: (503) 459-4141

Education

• Ph.D., Chemical Engineering, University of Delaware, Newark, Delaware
• B.S., Chemical Engineering, Louisiana State University, Baton Rouge, Louisiana, Magna Cum Laude
• National Science Foundation Graduate Research Fellow

Professional Experience

• Adrian B. Sherrill, Ph.D. worked as a senior process development engineer for the Logic Technology Development division of Intel Corporation, specializing in the pathfinding and development of novel thin-film deposition processes and equipment.
• Professional experience in atomic layer deposition, low-pressure chemical vapor deposition, and physical vapor deposition processes for metals, metal oxides, silicon oxides, and silicon nitrides, including thermal and plasma-enhanced deposition methods.
• Research experience in heterogeneous catalysis and surface electron spectroscopy.
• Author of numerous publications in academic journals and conference proceedings.
• United States Patents:
• USPTO 7,074,680. “Method for making a semiconductor device having a high-k gate dielectric.”
• USPTO 7,084,038. “Method for making a semiconductor device having a high-k gate dielectric.”